12V 9A Gate Driver in SOT26
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The ZXGD3001E6Q is a high-speed non-inverting single MOSFET gate driver capable of driving up to 9A into a MOSFET or IGBT gate capacitive load from supply voltages up to 12V with typical propagation delay times down to 3ns and rise/fall times down to 11ns. This device ensures rapid switching of the power MOSFET or IGBT to minimize power losses and distortion in high-current fast-switching applications.
The ZXGD3001E6Q is inherently rugged to latchup and shoot-through. Its wide supply voltage range allows full enhancement to minimize on-losses of the power MOSFET or IGBT.
Its low-input voltage requirement and high current gain allows high current driving from low voltage controller ICs.
The optimized pinout SOT26 package with separate source and sink pins eases board layout, enabling reduced parasitic inductance and independent control of rise and fall slew rates.
Power MOSFET and IGBT gate driving in
Category | Gate Driver Transistors |
---|---|
Compliance(Only Automotive supports PPAP) | Automotive |
Polarity | NPN + PNP |
VIN & VCC max (V) | 12 |
I(source) typ (A) | 4.2 |
@ IIN (mA) | 10 |
I(sink) typ (A) | 2.2 |
@ IIN 2 (mA) | 10 (mA) |
IPK typ (A) | 9 A |
@ IIN 2 (A) | 1 A |
td(rise) typ (ns) | 1.3 ns |
tr typ (ns) | 7.3 ns |
td(fall) typ (ns) | 3 ns |
tf typ (ns) | 11 ns |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2324 | 2018-02-28 | 2018-05-28 | Addition of A Passivation Layer Over The Top Metal of The Die for Selected Automotive BJT Devices |