ZXGD3006E6Q

Description

The ZXGD3006E6Q is a 40V Gate Driver for switching IGBTs and SiC MOSFETs. It can transfer up to 10A peak source/sink current into the gate for effective charging and discharging of a large capacitive load.

The ZXGD3006E6Q can drive typically 4A into the low gate impedance of an IGBT, with just 1mA input from a controller. Also, the turn-on and turn-off switching behavior of the IGBT can be individually tailored to suit an application. In particular, by defining the switching characteristics appropriately, EMI and cross conduction can be reduced.

Feature(s)

• High-Gain Buffer with Typically 4A Output from 1mA Input
• 40V Supply for +20V to -18V gate driving to prevent dV/dt induced false triggering
• Emitter-Follower that is Rugged to Latch-Up / Shoot-Through Issues, and Delivers <10ns Propagation Delay Time
• Optimized Pin-Out to Simplify PCB Layout and Reduce Parasitic Trace Inductances
• Near-Zero Quiescent Supply Current
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• The ZXGD3006E6Q is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

 Gate driving IGBTs and SiC MOSFETs in:

• DC-DC converters in electric cars
• Automotive active suspension systems
• Solar inverters
• Power supplies
• Plasma display panel power modules