30V SO8 Complementary enhancement mode MOSFET H-Bridge
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This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive.
AEC Qualified | No |
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Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | 2N2P |
ESD Diodes (Y|N) | No |
|VDS| (V) | 30 V |
|VGS| (±V) | 20 ±V |
|IDS| @TA = +25°C (A) | 3.98, 3.36 |
PD @TA = +25°C (W) | 0.87 |
RDS(ON)Max@ VGS(10V)(mΩ) | 33, 55 mΩ |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 60, 80 mΩ |
QG Typ @ |VGS| = 10V (nC) | 9, 12.7 nC |
CISS Typ (pF) | 430, 670 pF |
CISS Condition @|VDS| (V) | 15, 15 V |