Diodes Incorporated — Analog and discrete power solutions
SO 8

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ZXMN10A08DN8

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation of trench MOSFETs utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high-efficiency, low-voltage, power management applications.

Feature(s)

  • Low On-Resistance
  • Fast Switching Speed
  • Low Threshold
  • Low Gate Drive
  • Low Profile SOIC Package
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

  • DC-DC converters
  • Power-management functions
  • Disconnect switches
  • Motor controls

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N+N
ESD Diodes (Y|N) No
|VDS| (V) 100 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 2.1
PD @TA = +25°C (W) 1.25
RDS(ON)Max@ VGS(10V)(mΩ) 250 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 300 (@6V) mΩ
QG Typ @ |VGS| = 4.5V (nC) 4.2 (@5V) nC
QG Typ @ |VGS| = 10V (nC) 7.7 nC
CISS Typ (pF) 405 pF

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC