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ZXMN10A08DN8

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation of trench MOSFETs utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high-efficiency, low-voltage, power management applications.

Feature(s)

Low On-Resistance
Fast Switching Speed
Low Threshold
Low Gate Drive
Low Profile SOIC Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

DC-DC converters
Power-management functions
Disconnect switches
Motor controls

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N+N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	100 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	2.1
P_D @T_A = +25°C (W)	1.25
R_DS(ON)Max@ V_GS(10V)(mΩ)	250 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	300 (@6V) mΩ
Q_G Typ @ \|V_GS\| = 4.5V (nC)	4.2 (@5V) nC
Q_G Typ @ \|V_GS\| = 10V (nC)	7.7 nC
C_ISS Typ (pF)	405 pF

Technical Documents

SPICE Model

ZXMN10A08DN8.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile