N-CHANNEL ENHANCEMENT MODE MOSFET
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This MOSFET features low on-resistance, fast switching and a high avalanche withstand capability, making it ideal for high efficiency power management applications.
AEC Qualified | Yes |
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Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | N |
ESD Diodes (Y|N) | No |
|VDS| (V) | 200 V |
|VGS| (±V) | 20 ±V |
|IDS| @TA = +25°C (A) | 1.5 |
PD @TA = +25°C (W) | 2.2 |
RDS(ON)Max@ VGS(10V)(mΩ) | 750 mΩ |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 780 (@5V) mΩ |
|VGS(TH)| Max (V) | 2.5 V |
QG Typ @ |VGS| = 4.5V (nC) | 8.1 (@5V) nC |
CISS Typ (pF) | 358 @ 25V pF |