Diodes Incorporated — Analog and discrete power solutions
Back to MOSFET Master Table

ZXMN3A01Z

N-CHANNEL ENHANCEMENT MODE MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • DC-DC Converters
  • Power Management functions
  • Motor control
  • Product Specifications

    Product Parameters

    AEC Qualified Yes
    Compliance (Only Automotive(Q) supports PPAP) Standard
    Polarity N
    ESD Diodes (Y|N) No
    |VDS| (V) 30 V
    |VGS| (±V) 20 ±V
    |IDS| @TA = +25°C (A) 3.3
    PD @TA = +25°C (W) 2.12
    RDS(ON)Max@ VGS(10V)(mΩ) 120 mΩ
    RDS(ON)Max@ VGS(4.5V)(mΩ) 180 mΩ
    QG Typ @ |VGS| = 4.5V (nC) 2.6 nC
    QG Typ @ |VGS| = 10V (nC) 5 nC

    Related Content

    Packages

    Technical Documents

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC