Diodes Incorporated — Analog and discrete power solutions
SOT23

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ZXMN3A14FQ

30V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101 and supported by a PPAP.

Feature(s)

  • Low on-resistance
  • Fast switching speed
  • Low gate charge
  • Low threshold

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 30 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 3.9
PD @TA = +25°C (W) 1
RDS(ON)Max@ VGS(10V)(mΩ) 65 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 95 mΩ
|VGS(TH)| Max (V) 2.2 V
QG Typ @ |VGS| = 10V (nC) 8.6 nC
CISS Typ (pF) 448 pF
CISS Condition @|VDS| (V) 15 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf