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BAV116T

ULTRA LOW LEAKAGE SURFACE MOUNT DIODE

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Description

Ultra-low leakage surface mount diode.

Feature(s)

  • Ultra Low Leakage Current (5nA @ VR = 75V)
  • Small Surface Mount Package (1.6x0.8x0.6mm)

Application(s)

  • Mobile Phones
  • Portable and Consumer Electronics

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive supports PPAP) Standard
Configuration Anode, Cathode
Polarity Anode, Cathode
Power Rating(mW) 280 mW
ESD Diodes (Y|N) No
Peak RepetitiveReverse VoltageVRRM (V) 85 V
Reverse RecoveryTime trr (ns) 3000 ns
Maximum Average Rectifier Current IO (mA) 100 mA
Maximum Peak Forward Surge Current IFSM (A) 4 A
Forward Voltage Drop VF @ IF (mA) 0.9, 1 mA
Maximum ReverseCurrent IR (µA) 0.005 µA
TotalCapacitance CT (pF) 1.2 pF
VF(V) Max @ IF=100mA 1
V(BR)R (V) Min @IR=100μA 85
Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100Ω 3000
Maximum Reverse Current IR @ VR (V) 75 V
IR(uA) Max @ VR=80V 5nA@75V
CT(pF) Max @ VR = 0V, f = 1MHz 2

Related Content

Packages

Applications

Technical Documents

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2544 2021-10-05 2022-01-05 Phenitec Wafer Manufacturing Site Change and Additional Wafer Source on Select Products
PCN-2461 2020-05-08 2021-04-05 Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site
PCN-2315 2018-03-09 2018-06-09 Qualification of Alternative Wafer Sources for Select Products Due to Closure of Diodes FabTech (KFAB) Facility