* DIODES INCORPORATED AND ITS AFFILIATED COMPANIES AND SUBSIDIARIES (COLLECTIVELY, "DIODES") * PROVIDE THESE SPICE MODELS AND DATA (COLLECTIVELY, THE "SM DATA") "AS IS" AND WITHOUT ANY * REPRESENTATIONS OR WARRANTIES, EXPRESS OR IMPLIED, INCLUDING ANY WARRANTY OF MERCHANTABILITY * OR FITNESS FOR A PARTICULAR PURPOSE, ANY WARRANTY ARISING FROM COURSE OF DEALING OR COURSE OF * PERFORMANCE, OR ANY WARRANTY THAT ACCESS TO OR OPERATION OF THE SM DATA WILL BE UNINTERRUPTED, * OR THAT THE SM DATA OR ANY SIMULATION USING THE SM DATA WILL BE ERROR FREE. TO THE MAXIMUM * EXTENT PERMITTED BY LAW, IN NO EVENT WILL DIODES BE LIABLE FOR ANY DIRECT OR INDIRECT, * SPECIAL, INCIDENTAL, PUNITIVE OR CONSEQUENTIAL DAMAGES ARISING OUT OF OR IN CONNECTION WITH * THE PRODUCTION OR USE OF SM DATA, HOWEVER CAUSED AND UNDER WHATEVER CAUSE OF ACTION OR THEORY * OF LIABILITY BROUGHT (INCLUDING, WITHOUT LIMITATION, UNDER ANY CONTRACT, NEGLIGENCE OR OTHER * TORT THEORY OF LIABILITY), EVEN IF DIODES HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES, * AND DIODES' TOTAL LIABILITY (WHETHER IN CONTRACT, TORT OR OTHERWISE) WITH REGARD TO THE SM * DATA WILL NOT, IN THE AGGREGATE, EXCEED ANY SUMS PAID BY YOU TO DIODES FOR THE SM DATA. *---------- DMT8020LDG Spice Model ---------- *Q1 .SUBCKT DMT8020LDG_Q1 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01016 RS 30 3 0.0001 RG 20 2 0.33 CGS 2 3 8.732E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 5.87E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.595 + TOX = 1E-007 NSUB = 1E+016 KP = 53.75 U0 = 480.6 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.055E-010 VJ = 1.932 M = 0.8942 .MODEL DSUB D IS = 5.547E-009 N = 1.376 RS = 0.003207 BV = 83.7 + CJO = 6.194E-010 VJ = 2 M = 0.242 XTI = 0 TT = 1.968E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Q2 .SUBCKT DMT8020LDG_Q2 10 20 30 * TERMINALS : D G S * MODEL FORMAT : SPICE3 * Editor : Stan Li M1 1 2 3 3 NMOS L = 1E-006 W = 1E-006 RD 10 1 0.01022 RS 30 3 0.0001 RG 20 2 0.4 CGS 2 3 8.563E-010 EGD 12 0 2 1 1 VFB 14 0 0 FFB 2 1 VFB 1 CGD 13 14 6.675E-010 R1 13 0 1 D1 12 13 DLIM DDG 15 14 DCGD R2 12 15 1 D2 15 0 DLIM DSD 3 10 DSUB .MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+005 ETA = 0 VTO = 2.491 + TOX = 1E-007 NSUB = 1E+016 KP = 50.33 U0 = 490.9 KAPPA = 0.2 IS = 0 .MODEL DCGD D CJO = 3.621E-010 VJ = 1.607 M = 0.9 .MODEL DSUB D IS = 7.3E-009 N = 1.386 RS = 0.003503 BV = 83.4 + CJO = 6.214E-010 VJ = 2 M = 0.2429 XTI = 0 TT = 1.703E-008 .MODEL DLIM D IS = 0.0001 .ENDS *Diodes Spice Model v1.2 Last Revised 2024/09/19 *The model is an approximation of the device, and it may not show the true device performance under all conditions. *The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet.