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*---------- DMTH82M6SPSWQ Spice Model ----------
.SUBCKT DMTH82M6SPSWQ 10 20 30 
* TERMINALS : D G S
* MODEL FORMAT : SPICE3
* Editor : Stan Li
M1 1 2 3 3 NMOS L = 1E-06 W = 1E-06 
RD 10 1 0.0001 
RS 30 3 0.0001 
RG 20 2 1.17 
CGS 2 3 5.352E-09 
EGD 12 0 2 1 1 
VFB 14 0 0 
FFB 2 1 VFB 1 
CGD 13 14 2.267E-09 
R1 13 0 1 
D1 12 13 DLIM 
DDG 15 14 DCGD 
R2 12 15 1 
D2 15 0 DLIM 
DSD 3 10 DSUB 
.MODEL NMOS NMOS LEVEL = 3 VMAX = 1E+05 ETA = 0 VTO = 4.027 TOX = 1E-07 
+ NSUB = 1.923E+15 KP = 108.3 U0 = 100 KAPPA = 0.2 IS = 0 
.MODEL DCGD D CJO = 1.424E-09 VJ = 0.8 M = 0.6108 
.MODEL DSUB D IS = 3.55E-09 N = 1.333 RS = 6.128E-05 BV = 94 
+ CJO = 4.025E-09 VJ = 0.9 M = 0.3 XTI = 0 TT = 3.593E-08 
.MODEL DLIM D IS = 0.0001 
.ENDS
*Diodes Spice Model v1.2 Last Revised 2024/10/09
*The model is an approximation of the device, and it may not show the true device performance under all conditions.
*The model only guarantees the accuracy of the key parameters (Ron, VSD, IDSS, Ciss, Coss, Crss, and Trr) at 25 degC in the current data sheet.