1N5817

1.0A Schottky Barrier Rectifier

Datasheet

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Feature(s)

Guard Ring Die Construction for Transient Protection
Low-Power Loss, High Efficiency
High-Surge Capability
High-Current Capability and Low-Forward Voltage Drop
For Use in Low-Voltage, High-Frequency Inverters, Free Wheeling, and Polarity Protection Application
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive supports PPAP)	Standard
Configuration	Single
MaximumAverageRectifiedCurrent I_O(A)	1 A
@ TerminalTemperature TT (ºC)	90 ºC
Peak RepetitiveReverse VoltageV_RRM(V)	20 V
Peak ForwardSurge CurrentI_FSM(A)	25 A
Forward VoltageDrop V_F(V)	0.75 V
@ I_F(A)	3 A
Maximum ReverseCurrent I_R(µA)	1000 µA
@ V_R(V)	20 V
TotalCapacitance C_T(pF)	110 pF

Technical Documents

SPICE Model

1N5817.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2517	2021-05-24	2020-11-24	Device End of Life (EOL)
PCN-2477	2020-08-17	2021-05-09	Additional Wafer Source (GFAB), and Transfer Assembly and Test Site to DiYi