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1N5818

1.0A Schottky Barrier Rectifier

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Feature(s)

  • Guard Ring Die Construction for Transient Protection
  • Low-Power Loss, High Efficiency
  • High-Surge Capability
  • High-Current Capability and Low-Forward Voltage Drop
  • For Use in Low-Voltage, High-Frequency Inverters, Free Wheeling, and Polarity Protection Application
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive supports PPAP) Standard
Configuration Single
MaximumAverageRectifiedCurrent IO (A) 1 A
@ TerminalTemperature TT (ºC) N/A ºC
Peak RepetitiveReverse VoltageVRRM (V) 30 V
Peak ForwardSurge CurrentIFSM(A) 25 A
Forward VoltageDrop VF(V) 0.875 V
@ IF (A) 3 A
Maximum ReverseCurrent IR (µA) 1000 µA
@ VR (V) 30 V
TotalCapacitance CT (pF) 110 pF

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2550 2021-12-20 2022-06-20 Device End of Life (EOL)
PCN-2477 2020-08-17 2021-05-09 Additional Wafer Source (GFAB), and Transfer Assembly and Test Site to DiYi
PCN-2418 2019-11-07 2020-05-07 Device End of Life (EOL)