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Back to Schottky (.5A and Above)

B2100AE

2.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

Datasheet

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Description

The schottky rectifier providing low VF and excellent reverse leakage stability at high temperatures, this device is ideal for use in general rectification applications.

Feature(s)

Reduced Low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation
Reduced High-temperature Reverse Leakage; Increased Reliability against Thermal Runaway Failure in High Temperature Operation.
Lead-Free Finish; RoHS Compliant
Halogen and Antimony Free. “Green” Device

Application(s)

Boost Diodes
Blocking Diodes
Recirculating Diodes

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive supports PPAP)	Standard
Configuration	Single
MaximumAverageRectifiedCurrent I_O(A)	2 A
@ TerminalTemperature TT (ºC)	N/A ºC
Peak RepetitiveReverse VoltageV_RRM(V)	100 V
Peak ForwardSurge CurrentI_FSM(A)	50 A
Forward VoltageDrop V_F(V)	0.79 V
@ I_F(A)	2 A
Maximum ReverseCurrent I_R(µA)	7 µA
@ V_R(V)	100 V
TotalCapacitance C_T(pF)	70 pF

Technical Documents

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2623	2023-05-15	2023-11-15	Device End of Life (EOL)
PCN-2542	2021-08-30	2021-11-30	Qualification of Additional Clip Bonding, Lead Frame Structure (Matrix) and Mold Compound for Select Discrete Products in SMA Package
PCN-2477	2020-08-17	2021-05-09	Additional Wafer Source (GFAB), and Transfer Assembly and Test Site to DiYi
PCN-2460	2020-05-12	2020-05-12	Qualified Additional Wafer Source and BGBM Source
PCN-2398	2019-05-21	2019-08-21	Transfer Assembly Lines to Eris Assembly Site (Plant 2) in Taoyuan, Taiwan from the Existing Assembly Site (Plant 1) in Taipei City, Taiwan for Select Discrete Products