Diodes Incorporated — Analog and discrete power solutions
SOT26

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BAS21TMQ

Switching Diode

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Feature(s)

  • Fast Switching Speed: max. 50ns
  • Continuous Reverse Voltage: max. 200V
  • Repetitive Peak Reverse Voltage: max. 250V
  • Repetitive Peak Forward Current: max. 1A
  • Small Surface Mount Package
  • For General Purpose Switching Applications

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive supports PPAP) Automotive
Configuration Triple, Isolated (Alt.)
Polarity Anode, Cathode
Power Rating(mW) 300 mW
ESD Diodes (Y|N) No
Peak RepetitiveReverse VoltageVRRM (V) 250 V
Reverse RecoveryTime trr (ns) 50 ns
Maximum Average Rectifier Current IO (mA) 200 mA
Maximum Peak Forward Surge Current IFSM (A) 10 A
Forward Voltage Drop VF @ IF (mA) 100, 1 mA
Maximum ReverseCurrent IR (µA) 0.1 µA
TotalCapacitance CT (pF) 5 pF
V(BR)R (V) Min @IR=100μA 250
Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100Ω 50
Maximum Reverse Current IR @ VR (V) 250 V
VF(V) Max @ IF=1.0mA 0.9
VF(V) Max @ IF=10mA 1
IR(uA) Max @ VR=80V 100nA@250V
CT(pF) Max @ VR = 0V, f = 1MHz 5

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2545 2021-10-05 2022-01-05 Phenitec Wafer Manufacturing Site Change and Additional Wafer Source on Select Automotive Products
PCN-2462 2020-05-08 2021-04-11 Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site (Automotive)
PCN-2319 2018-03-09 2018-06-09 Qualification of Alternative Wafer Sources for Select Automotive Products Due to Closure of Diodes FabTech (KFAB) Facility