HIGH-SIDE AND LOW-SIDE GATE DRIVERS
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The DGD2101 is a high voltage/high speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a high-side/low-side configuration. High voltage processing techniques enable the DGD2101’s high-side to switch to 600V in a bootstrap operation. The 50ns (max) propagation delay matching between the high and the low side drivers allows high frequency switching.
The DGD2101 logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) for easy interfacing with controlling devices. The driver outputs feature high pulse current buffers designed for minimum driver cross conduction. The low-side gate driver and logic share a common ground.
The DGD2101 is available in a space saving 8-pin SO package, the operating temperature extends from -40°C to +125°C.
Inputs | HIN, LIN |
---|---|
Offset Voltage Max (V) | 600 |
Output Current IO- (Typ) (mA) | 600 |
Output Current IO+ (Typ) (mA) | 290 |
tF (Typ) (ns) | 35 |
tOFF (Typ) (ns) | 150 |
tON (Typ) (ns) | 160 |
tR (Typ) (ns) | 70 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2495 | 2021-03-31 | 2021-07-01 | Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products |
PCN-2502 | 2021-03-15 | 2021-09-15 | Device End of Life (EOL) |