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DGD2106M

HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8

Datasheet

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Description

The DGD2106M is a high-voltage / high-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half-bridge configuration. High voltage processing techniques enable the DGD2106M’s high-side to switch to 600V in a bootstrap operation.

The DGD2106M logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) to interface easily with controlling devices. The driver outputs feature high pulse current buffers designed for minimum driver cross conduction.

The DGD2106M is available in a space saving SO-8 (Type TH) package and operates over an extended -40°C to +125°C temperature range.

Feature(s)

Floating High-Side Driver in Bootstrap Operation to 600V
Drives two N-Channel MOSFETs or IGBTs in Half Bridge Configuation
Outputs Tolerant to Negative Transients
Wide Logic and Low-Side Gate Driver Supply Voltage: 10V To 20V
Logic Input (HIN and LIN) 3.3V Capability
Schmitt Triggered Logic Inputs with Internal Pull Down
Undervoltage Lockout for High and Low Side Drivers
Extended Temperature Range: -40°C To +125°C

Application(s)

DC-DC Converters
DC-AC Inverters
AC-DC Power Supplies
Motor Controls
Class D Power Amplifiers

Product Specifications

Product Parameters

Compliance (Only Automotive(Q) supports PPAP)	Standard
Offset Voltage Max (V)	600 V
Inputs	HIN, LIN
Output Current I_O+ (Typ) (mA)	290 mA
Output Current I_O- (Typ) (mA)	600 mA
t_ON (Typ) (ns)	220 ns
t_OFF (Typ) (ns)	200 ns
t_R (Typ) (ns)	100 ns
t_F (Typ) (ns)	35 ns

Technical Documents

Brochures and Flyers

Gate-Driver-Flyer.pdf (3.6 MB)

Recommended Soldering Techniques

TN1.pdf