Diodes Incorporated — Analog and discrete power solutions
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DHVSD3004S1Q

Surface Mount High Voltage Low Leakage Diode

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Feature(s)

  • Low Leakage Current: ≤100nA
  • Fast Switching Speed: ≤50ns
  • High Reverse Breakdown Voltage: ≥350V
  • Ideal for Battery-Powered, Portable Applications
  • Extremely Low Reverse Leakage Current at High Temperature
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3 & 4)
  • The DHVSD3004S1Q is suitable for automotive applications requiring specific change control; this part isAEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive supports PPAP) Automotive
Configuration Single
Polarity Anode, Cathode
Power Rating(mW) 350 mW
ESD Diodes (Y|N) No
Peak RepetitiveReverse VoltageVRRM (V) 350 V
Reverse RecoveryTime trr (ns) 50 ns
Maximum Average Rectifier Current IO (mA) 225 mA
Maximum Peak Forward Surge Current IFSM (A) 4A @ 1us, 0.5A @ 1s A
Forward Voltage Drop VF @ IF (mA) 1.15V @ 200mA mA
Maximum ReverseCurrent IR (µA) 0.1 µA
V(BR)R (V) Min @IR=150μA 350
TotalCapacitance CT (pF) 5 pF
VF(V) Max @ IF=20mA 0.87
VF(V) Max @ IF=100mA 0.998
VF(V) Max @ IF=200mA 1.15
Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100Ω 50ns
Maximum Reverse Current IR @ VR (V) 0.1 @ 240V V
IR(μA) Max @ VR=240V 0.1
CT(pF) Max @ VR = 0V, f = 1MHz 5

Technical Documents

Recommended Soldering Techniques

TN1.pdf