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TSOT26.pngNRND = Not Recommended for New Design
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This new generation 20V N +P channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to Handheld applications.
| Compliance (Only Automotive supports PPAP) | On Request |
|---|---|
| CISS Condition @|VDS| (V) | 10 |
| CISS Typ (pF) | 400, 530 |
| ESD Diodes (Y|N) | No |
| |IDS| @TA = +25°C (A) | 4.5, 3.1 |
| PD @TA = +25°C (W) | 1.1 |
| Polarity | N+P |
| QG Typ @ |VGS| = 10V (nC) | N/A |
| QG Typ @ |VGS| = 4.5V (nC) | 5.7, 7 |
| AEC Qualified | Yes |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | 56, 168 |
| RDS(ON)Max@ VGS(10V)(mΩ) | N/A |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 43, 110 |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 35, 74 |
| |VDS| (V) | 20 |
| |VGS| (±V) | 12 |
| |VGS(TH)| Max (V) | 1 |
| |VGS(TH)| Min (V) | 0.4 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2403 | 2019-03-25 | 2019-06-19 | Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, Additional Wafer Source, or Additional Assembly and Test site for Select Products. |
| PCN-2340 | 2018-04-26 | 2018-05-26 | Qualification of Alternate Wafer Sources for Select MOSFET Products |
