DMC3009LPDW

Complementary Pair Enhancement Mode MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (R_DS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

100% Unclamped Inductive Switching, Test in Production – Ensures More Reliable and Robust End Application
High Conversion Efficiency
Low R_DS(ON)– Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed
Wettable Flank for Improved Optical Inspection
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

Motor controls
Power-management functions
DC-DC converters

Specifications & Technical Documents

Product Parameters

AEC Qualified	No
Compliance (Only Automotive Supports PPAP)	Standard
Polarity	N+P
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	30 V
\|V_GS\| (±V)	20/16, 25 ±V
\|I_DS\| @T_A = +25°C (A)	10.6, 9.8
\|I_DS\| @T_C = +25°C (A)	39, 36.5
P_D @T_A = +25°C (W)	30.1
R_DS(ON)Max@ V_GS(10V)(mΩ)	13, 15 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	20, 25 mΩ
\|V_GS(TH)\| Min (V)	1 V
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	5.8, 25 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	12, 46 nC
C_ISS Typ (pF)	823, 2380 pF
C_ISS Condition @\|V_DS\| (V)	15 V

Technical Documents

Recommended Soldering Techniques

TN1.pdf