COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
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This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
| AEC Qualified | No |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | N+P |
| ESD Diodes (Y|N) | Yes |
| |VDS| (V) | 30, 30 V |
| |VGS| (±V) | 12, 12 ±V |
| |IDS| @TA = +25°C (A) | 0.4, 0.22 |
| PD @TA = +25°C (W) | 0.37 |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 1500 ,5000 mΩ |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 2000 ,6000 mΩ |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | 3000, 7000 mΩ |
| |VGS(TH)| Min (V) | 0.4, 0.4 V |
| |VGS(TH)| Max (V) | 1, 1 V |
| QG Typ @ |VGS| = 4.5V (nC) | 0.38, 0.35 nC |
| CISS Typ (pF) | 22.6, 21.8 pF |
| CISS Condition @|VDS| (V) | 15, 15 V |
