Complementary Pair Enhancement Mode MOSFET
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
AEC Qualified | No |
---|---|
Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | N+P |
ESD Diodes (Y|N) | Yes |
|VDS| (V) | 60,60 V |
|VGS| (±V) | 20,20 ±V |
|IDS| @TA = +25°C (A) | 0.48,0.32 |
PD @TA = +25°C (W) | 0.8 |
RDS(ON)Max@ VGS(10V)(mΩ) | 1700, 4000 mΩ |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 3000, 6000 mΩ |
|VGS(TH)| Min (V) | 1,1 V |
|VGS(TH)| Max (V) | 2.5,3 V |
QG Typ @ |VGS| = 4.5V (nC) | 0.51,0.5 nC |
QG Typ @ |VGS| = 10V (nC) | 1.04,1.1 nC |
CISS Typ (pF) | 41,40 pF |
CISS Condition @|VDS| (V) | 30,25 V |