Complementary Pair Enhancement Mode MOSFET
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in: general-purpose interfacing switches, power management functions, and analog switches.
AEC Qualified | Yes |
---|---|
Compliance (Only Automotive(Q) supports PPAP) | Automotive |
Polarity | N+P |
ESD Diodes (Y|N) | Yes |
|VDS| (V) | 60,60 V |
|VGS| (±V) | 20,20 ±V |
|IDS| @TA = +25°C (A) | 0.48,0.32 |
PD @TA = +25°C (W) | 0.8 |
RDS(ON)Max@ VGS(10V)(mΩ) | 1700, 4000 mΩ |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 3000, 6000 mΩ |
|VGS(TH)| Min (V) | 1,1 V |
|VGS(TH)| Max (V) | 2.5,3 V |
QG Typ @ |VGS| = 4.5V (nC) | 0.51,0.5 nC |
QG Typ @ |VGS| = 10V (nC) | 1.04,1.1 nC |
CISS Typ (pF) | 41,40 pF |
CISS Condition @|VDS| (V) | 30,25 V |