DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
AEC Qualified | Yes |
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Compliance (Only Automotive(Q) supports PPAP) | Automotive |
Polarity | N+N |
ESD Diodes (Y|N) | Yes |
|VDS| (V) | 60 V |
|VGS| (±V) | 20 ±V |
|IDS| @TA = +25°C (A) | 0.41 |
PD @TA = +25°C (W) | 0.65 |
RDS(ON)Max@ VGS(10V)(mΩ) | 1800 mΩ |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 2100 mΩ |
|VGS(TH)| Max (V) | 1.8 V |
QG Typ @ |VGS| = 4.5V (nC) | 0.45 nC |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2570 | 2022-03-02 | 2022-06-02 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu Bond Wire, New Mold Compound Type, and New Die Attach Material for Select Automotive Products |