Diodes Incorporated — Analog and discrete power solutions
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DMG3415UFY4Q

P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • ESD Protected Up To 3kV

Application(s)

  • Load Switch
  • DC-DC Converters
  • Power Management Functions

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity P
ESD Diodes (Y|N) Yes
|VDS| (V) 16 V
|VGS| (±V) 8 ±V
|IDS| @TA = +25°C (A) 2.5
PD @TA = +25°C (W) 1.35
RDS(ON)Max@ VGS(10V)(mΩ) 39 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 52 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 65 mΩ
|VGS(TH)| Min (V) 0.3 V
|VGS(TH)| Max (V) 1 V
QG Typ @ |VGS| = 4.5V (nC) 10 nC
CISS Typ (pF) 282 pF
CISS Condition @|VDS| (V) 10 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf