Diodes Incorporated — Analog and discrete power solutions
V DFN5045 12

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DMHC10H170SFJ

100V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Low Input Capacitance
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

  • High-Efficiency Bridge Rectifiers

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity 2N2P
ESD Diodes (Y|N) No
|VDS| (V) 100 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 2.3, 2.9
PD @TA = +25°C (W) 2.1
RDS(ON)Max@ VGS(10V)(mΩ) 250, 160 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 300, 200 mΩ
|VGS(TH)| Min (V) 1, 1 V
|VGS(TH)| Max (V) 3, 3 V
QG Typ @ |VGS| = 10V (nC) 17.5, 9.7 nC
CISS Typ (pF) 1239, 1167 pF
CISS Condition @|VDS| (V) 25 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products