Diodes Incorporated — Analog and discrete power solutions
U DFN2020 6 Type F

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U-DFN2020-6-Type-F.png
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DMN1005UFDF

12V N-Channel Enhancement Mode MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • 6mm Profile – Ideal for Low Profile Applications
  • PCB Footprint of 4mm2
  • Low Gate Threshold Voltage
  • Fast Switching Speed
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/.
  • This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Battery Management Application
  • Power Management Functions
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 12 V
|VGS| (±V) 8 ±V
|IDS| @TA = +25°C (A) 14.1
PD @TA = +25°C (W) 1.8
RDS(ON)Max@ VGS(4.5V)(mΩ) 6 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 10 mΩ
|VGS(TH)| Min (V) 0.3 V
|VGS(TH)| Max (V) 1 V
QG Typ @ |VGS| = 4.5V (nC) 29.7 nC
CISS Typ (pF) 2014 pF
CISS Condition @|VDS| (V) 6 V

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf