Diodes Incorporated — Analog and discrete power solutions
TO252 DPAK

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. TO252 (DPAK)

TO252 DPAK

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. TO252 (DPAK)

TO252 DPAK

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. TO252 (DPAK)

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DMN10H170SK3

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation 100V N channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to DC/DC power management and Motherboard / Servers application

Application(s)

  • DC-DC Converters
  • Power Management Functions
  • Analog Switch
  • Specifications & Technical Documents

    Product Parameters

    AEC Qualified Yes
    Compliance (Only Automotive(Q) supports PPAP) Standard
    Polarity N
    ESD Diodes (Y|N) No
    |VDS| (V) 100 V
    |VGS| (±V) 20 ±V
    |IDS| @TC = +25°C (A) 12
    PD @TA = +25°C (W) 2.84
    PD @TC = +25°C (W) 42
    RDS(ON)Max@ VGS(10V)(mΩ) 140 mΩ
    RDS(ON)Max@ VGS(4.5V)(mΩ) 160 mΩ
    |VGS(TH)| Max (V) 3 V
    QG Typ @ |VGS| = 4.5V (nC) 4.9 nC
    QG Typ @ |VGS| = 10V (nC) 9.7 nC
    CISS Typ (pF) 1167 pF
    CISS Condition @|VDS| (V) 25 V

    Related Content

    Packages

    Technical Documents

    SPICE Model

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC

    Purchase & Availablity

    Product Change Notices (PCNs)

    A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

    PCN # Issue Date Implementation Date Subject
    PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
    Source for Select Discrete Products