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DMN10H170SVT

N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant
Halogen and Antimony Free. “Green” Device

Application(s)

Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	100 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	2.6
P_D @T_A = +25°C (W)	1.7
R_DS(ON)Max@ V_GS(10V)(mΩ)	160 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	200 mΩ
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	4.9 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	9.7 nC
C_ISS Typ (pF)	1167 pF
C_ISS Condition @\|V_DS\| (V)	25 V

Technical Documents

SPICE Model

DMN10H170SVT.spice.txt

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2495	2021-03-31	2021-07-01	Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products