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DMN10H170SVTQ

100V N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation MOSFET is designed to minimize the on-state resistance (R_DS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed

Application(s)

Power Management Functions
Battery Operated Systems and Solid-State Relays
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Automotive
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	100 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	2.6
P_D @T_A = +25°C (W)	1.7
R_DS(ON)Max@ V_GS(10V)(mΩ)	160 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	200 mΩ
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	4.9 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	9.7 nC
C_ISS Typ (pF)	1167 pF
C_ISS Condition @\|V_DS\| (V)	25 V

Technical Documents

SPICE Model

DMN10H170SVTQ.spice.txt

Recommended Soldering Techniques

TN1.pdf