Diodes Incorporated — Analog and discrete power solutions
SO 8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SO-8

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DMN2009LSS

N-Channel Mosfet

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Specifications & Technical Documents

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 20 V
|VGS| (±V) 12 ±V
|IDS| @TA = +25°C (A) 12
PD @TA = +25°C (W) 2
RDS(ON)Max@ VGS(10V)(mΩ) 8 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 9 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 12 mΩ
|VGS(TH)| Min (V) 0.5 V
|VGS(TH)| Max (V) 1.2 V
QG Typ @ |VGS| = 4.5V (nC) 28.9 nC
QG Typ @ |VGS| = 10V (nC) 58.3 nC
CISS Typ (pF) 2555 pF

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Purchase & Availablity

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2389 2019-02-05 2019-08-05 Device End of Life