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DMN2015UFDE

N-Channel Mosfet

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Description

This new generation 20V N channel enhancement mode MOSFET has been designed to minimise R_DS(on) and yet maintain superior switching performance. This device is ideally suited to portable , Battery packing and other power management functions.

Application(s)

General Purpose Interfacing Switch

Power Management Functions

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	20 V
\|V_GS\| (±V)	12 ±V
\|I_DS\| @T_A = +25°C (A)	10.5
P_D @T_A = +25°C (W)	2.03
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	11.6 mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	15 mΩ
R_DS(ON)Max@ V_GS(1.8V)(mΩ)	30 mΩ
\|V_GS(TH)\| Min (V)	0.5 V
\|V_GS(TH)\| Max (V)	1.1 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	19.7 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	45.6 nC
C_ISS Typ (pF)	1779 pF

Technical Documents

SPICE Model

DMN2015UFDE.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2690	2024-05-29	2024-08-29	Qualification of Diodes’ subcontractor Eris Technology Corporation (Eris) in Taoyuan, Taiwan as Additional Assembly & Test Site and Diodes internal JKFAB in HsinChu, Taiwan as additional wafer source for Select Discrete Products.
PCN-2495	2021-03-31	2021-07-01	Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products