Diodes Incorporated — Analog and discrete power solutions
U DFN2020 6 Type F

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. U-DFN2020-6 (Type F)

U DFN2020 6 Type F

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. U-DFN2020-6 (Type F)

U DFN2020 6 Type F

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. U-DFN2020-6 (Type F)

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DMN2025UFDF

20V N-CHANNEL ENHANCEMENT MODE MOSFET

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Specifications & Technical Documents

Product Parameters

AEC Qualified No
Compliance (Only Automotive Supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) Yes
|VDS| (V) 20 V
|VGS| (±V) 10 ±V
|IDS| @TA = +25°C (A) 6.5
PD @TA = +25°C (W) 1.6
RDS(ON)Max@ VGS(4.5V)(mΩ) 25 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 31 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 60 mΩ
|VGS(TH)| Min (V) 0.5 V
|VGS(TH)| Max (V) 1 V
QG Typ @ |VGS| = 4.5V (nC) 5.9 nC
QG Typ @ |VGS| = 10V (nC) 12.3 nC
CISS Typ (pF) 486 pF
CISS Condition @|VDS| (V) 10 V

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Purchase & Availablity

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2690 2024-05-29 2024-08-29 Qualification of Diodes’ subcontractor Eris Technology Corporation (Eris) in Taoyuan, Taiwan as Additional Assembly & Test Site and Diodes internal JKFAB in HsinChu, Taiwan as additional wafer source for Select Discrete Products.