Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

TSOT26.png

Back to MOSFET Master Table

DMN2046UVT

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

Contact Sales

Description

This new generation MOSFET has been designed to minimize the on-state resistance (R_DS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

Backlighting
DC-DC converters
Power management functions

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N+N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	20 V
\|V_GS\| (±V)	12 ±V
\|I_DS\| @T_A = +25°C (A)	2.6
P_D @T_A = +25°C (W)	0.59
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	90 mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	130 mΩ
\|V_GS(TH)\| Min (V)	0.4 V
\|V_GS(TH)\| Max (V)	1.4 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	3.6 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	7.4 nC
C_ISS Typ (pF)	278 pF
C_ISS Condition @\|V_DS\| (V)	10 V

Technical Documents

SPICE Model

DMN2046UVT.spice.txt

Recommended Soldering Techniques

TN1.pdf