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DMN2250UFB

N-Channel Mosfet

Datasheet

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Description

This new generation 20V N channel enhancement mode MOSFET and Low profile has been designed to minimise R_DS(ON) and yet maintain superior switching performance. This device is ideally suited to Handheld application

Application(s)

DC-DC Converters

Power Management Functions

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	20 V
\|V_GS\| (±V)	8 ±V
\|I_DS\| @T_A = +25°C (A)	1.35
P_D @T_A = +25°C (W)	0.5
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	170 mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	230 mΩ
R_DS(ON)Max@ V_GS(1.8V)(mΩ)	250 mΩ
\|V_GS(TH)\| Min (V)	0.35 V
\|V_GS(TH)\| Max (V)	1 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	1.4 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	3.1 nC
C_ISS Typ (pF)	100 pF

Technical Documents

SPICE Model

DMN2250UFB.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2299	2018-03-01	2018-06-01	Additional Qualified (A/T) Assembly Test Site