Diodes Incorporated — Analog and discrete power solutions
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DMN2250UFB

N-Channel Mosfet

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Description

This new generation 20V N channel enhancement mode MOSFET and Low profile has been designed to minimise RDS(ON) and yet maintain superior switching performance. This device is ideally suited to Handheld application

Application(s)

  • DC-DC Converters
  • Power Management Functions
  • Specifications & Technical Documents

    Product Parameters

    AEC Qualified Yes
    Compliance (Only Automotive Supports PPAP) On Request
    Polarity N
    ESD Diodes (Y|N) Yes
    |VDS| (V) 20 V
    |VGS| (±V) 8 ±V
    |IDS| @TA = +25°C (A) 1.35
    PD @TA = +25°C (W) 0.5
    RDS(ON)Max@ VGS(4.5V)(mΩ) 170 mΩ
    RDS(ON)Max@ VGS(2.5V)(mΩ) 230 mΩ
    RDS(ON)Max@ VGS(1.8V)(mΩ) 250 mΩ
    |VGS(TH)| Min (V) 0.35 V
    |VGS(TH)| Max (V) 1 V
    QG Typ @ |VGS| = 4.5V (nC) 1.4 nC
    QG Typ @ |VGS| = 10V (nC) 3.1 nC
    CISS Typ (pF) 100 pF

    Related Content

    Packages

    Technical Documents

    SPICE Model

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC

    Purchase & Availablity