Diodes Incorporated — Analog and discrete power solutions
X2 DFN1006 3

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. X2-DFN1006-3

X2 DFN1006 3

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. X2-DFN1006-3

X2 DFN1006 3

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. X2-DFN1006-3

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DMN2500UFB4 (NRND)

NRND = Not Recommended for New Design

N-Channel Mosfet

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Description

This new generation 20V N channel enhancement mode MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • DC-DC Converters
  • Power management functions
  • Specifications & Technical Documents

    Product Parameters

    CISS Condition @|VDS| (V) N/A
    CISS Typ (pF) 62
    Compliance (Only Automotive Supports PPAP) On Request
    ESD Diodes (Y|N) Yes
    |IDS| @TA = +25°C (A) 0.81
    PD @TA = +25°C (W) N/A
    Polarity N
    QG Typ @ |VGS| = 10V (nC) N/A
    QG Typ @ |VGS| = 4.5V (nC) 0.74
    AEC Qualified Yes
    RDS(ON)Max@ VGS(1.8V)(mΩ) 700
    RDS(ON)Max@ VGS(10V)(mΩ) N/A
    RDS(ON)Max@ VGS(2.5V)(mΩ) 500
    RDS(ON)Max@ VGS(4.5V)(mΩ) N/A
    |VDS| (V) 20
    |VGS| (±V) 6
    |VGS(TH)| Max (V) 1
    |VGS(TH)| Min (V) 0.5

    Related Content

    Packages

    Technical Documents

    SPICE Model

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC

    Purchase & Availablity