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DMN2990UDJQ

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This MOSFET is designed to minimize the on-state resistance (R_DS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

Dual N-Channel MOSFET
Low On-Resistance
Very low Gate Threshold Voltage, 1.0V max
Low Input Capacitance
Fast Switching Speed
Ultra-Small Surface Mount Package 1mm x 1mm
Low Package Profile, 0.45mm Maximum Package height

Application(s)

General Purpose Interfacing Switch
Power Management Functions
DC-DC Converters
Analog Switch

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Automotive
Polarity	N+N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	20 V
\|V_GS\| (±V)	8 ±V
\|I_DS\| @T_A = +25°C (A)	0.45
P_D @T_A = +25°C (W)	0.35
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	990 mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	1200 mΩ
R_DS(ON)Max@ V_GS(1.8V)(mΩ)	1800 mΩ
\|V_GS(TH)\| Min (V)	0.4 V
\|V_GS(TH)\| Max (V)	1 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	0.5 nC
C_ISS Typ (pF)	27.6 pF
C_ISS Condition @\|V_DS\| (V)	16 V

Technical Documents

SPICE Model

DMN2990UDJQ.spice.txt

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2589	2022-05-11	2022-08-11	Qualified Additional Bill of Material (BOM) – Lead Frame Raw Material (C19400 XSH) - Automotive