30V N-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET has been designed to minimize the on-state resistance (RSS(ON)) with a 3.37mm x 1.47mm x 0.2mm size and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
| AEC Qualified | No |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | N+N |
| ESD Diodes (Y|N) | Yes |
| |VDS| (V) | 30 V |
| |VGS| (±V) | 20 ±V |
| |IDS| @TA = +25°C (A) | 14.6 |
| PD @TA = +25°C (W) | 2.7 |
| RDS(ON)Max@ VGS(10V)(mΩ) | 7.8 mΩ |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 11 mΩ |
| |VGS(TH)| Max (V) | 2.3 V |
| QG Typ @ |VGS| = 4.5V (nC) | 15.8 nC |
| QG Typ @ |VGS| = 10V (nC) | 31.3 nC |
| CISS Typ (pF) | 1476 pF |
| CISS Condition @|VDS| (V) | 15 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2647 | 2023-10-12 | 2024-01-12 | Back Metal Composition Change for Select Discrete Products |
| PCN-2473 | 2021-07-02 | 2021-10-02 | Qualification of Additional Wafer Source for Select Discrete Products |
