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DMN3009LFVWQ

30V N-CHANNEL ENHANCEMENT MODE MOSFET

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This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.

Low RDS(ON) – ensures on state losses are minimized
Small form factor thermally efficient package enables higher density end products
Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The DMN3009LFVWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101
qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Product Specifications

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Automotive
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	30 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_C = +25°C (A)	60
P_D @T_A = +25°C (W)	2
R_DS(ON)Max@ V_GS(10V)(mΩ)	5 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	7.4 mΩ
\|V_GS(TH)\| Max (V)	2.5 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	20 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	42 nC

SPICE Model

DMN3009LFVWQ.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile