Diodes Incorporated — Analog and discrete power solutions
Back to MOSFET Master Table

DMN3016LDN

30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Totally Lead-Free & Fully RoHS Compliant 
  • Halogen and Antimony Free. “Green” Device 

Application(s)

  • DC Motor Control
  • DC-AC Inverters

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N+N
ESD Diodes (Y|N) No
|VDS| (V) 30 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 7.3
PD @TA = +25°C (W) 1.6
RDS(ON)Max@ VGS(10V)(mΩ) 20 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 24 mΩ
|VGS(TH)| Max (V) 2 V
QG Typ @ |VGS| = 4.5V (nC) 11.3 nC
QG Typ @ |VGS| = 10V (nC) 25.1 nC
CISS Typ (pF) 1415 pF
CISS Condition @|VDS| (V) 15 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products
PCN-2402 2019-05-15 2019-08-15 Qualification of "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site and Conversion to Palladium Coated Copper Bond Wire with New Lead Frame Type on Select Products