Diodes Incorporated — Analog and discrete power solutions
SOT26

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

SOT26-Chip-Image.png
Back to MOSFET Master Table

DMN3033LDM

N-CHANNEL ENHANCEMENT MODE MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 30 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 6.9
PD @TA = +25°C (W) 2
RDS(ON)Max@ VGS(10V)(mΩ) 33 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 40 mΩ
|VGS(TH)| Max (V) 2.1 V
QG Typ @ |VGS| = 4.5V (nC) 6.4 nC
QG Typ @ |VGS| = 10V (nC) 13 nC
CISS Typ (pF) 755 pF

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2403 2019-03-25 2019-06-19 Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, Additional Wafer Source, or Additional Assembly and Test site for Select Products.