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TSOT26.png30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
| AEC Qualified | No |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | N+N |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 30, 30 V |
| |VGS| (±V) | 12, 12 ±V |
| |IDS| @TA = +25°C (A) | 3.6, 3.6 |
| PD @TA = +25°C (W) | 1.16 |
| RDS(ON)Max@ VGS(10V)(mΩ) | 60, 60 mΩ |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 100, 100 mΩ |
| |VGS(TH)| Max (V) | 1.8, 1.8 V |
| QG Typ @ |VGS| = 4.5V (nC) | 5.6, 5.6 nC |
| QG Typ @ |VGS| = 10V (nC) | 11.3, 11.3 nC |
| CISS Typ (pF) | 395, 395 pF |
| CISS Condition @|VDS| (V) | 15, 15 V |
