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DMN3066LVT

N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This new generation MOSFET is designed to minimize the on-state resistance R_DS(ON)yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

Low On-Resistance
Low-Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

DC-DC converters
Power-management functions
Backlighting

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	30 V
\|V_GS\| (±V)	12 ±V
\|I_DS\| @T_A = +25°C (A)	3.6
P_D @T_A = +25°C (W)	1.3
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	67 mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	98 mΩ
\|V_GS(TH)\| Min (V)	0.5 V
\|V_GS(TH)\| Max (V)	1.5 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	4 nC
C_ISS Typ (pF)	328 pF
C_ISS Condition @\|V_DS\| (V)	10 V

Technical Documents

SPICE Model

DMN3066LVT.spice.txt

Recommended Soldering Techniques

TN1.pdf