Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.
SOT563.pngDUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
| AEC Qualified | No |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | N+N |
| ESD Diodes (Y|N) | Yes |
| |VDS| (V) | 30 V |
| |VGS| (±V) | 20 ±V |
| |IDS| @TA = +25°C (A) | 0.35 |
| PD @TA = +25°C (W) | 0.43 |
| RDS(ON)Max@ VGS(10V)(mΩ) | 2400 mΩ |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 3000 mΩ |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | 7000 mΩ |
| |VGS(TH)| Max (V) | 1.4 V |
| QG Typ @ |VGS| = 4.5V (nC) | 0.55 nC |
| QG Typ @ |VGS| = 10V (nC) | 1.23 nC |
| CISS Typ (pF) | 48 pF |
| CISS Condition @|VDS| (V) | 5 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2495 | 2021-03-31 | 2021-07-01 | Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products |
