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DMN4060SVT

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Datasheet

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Description

This new generation 45V N Channel enhancement mode MOSFET has been designed to minimise R_DS(on) and yet maintain superior switching performance. This device is ideally suited to Handheld and lighten application

Application(s)

Handheld application

DC-DC Converters

Power management functions

Backlighting

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	45 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	4.8
P_D @T_A = +25°C (W)	1.8
R_DS(ON)Max@ V_GS(10V)(mΩ)	46 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	62 mΩ
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	10.4 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	22.4 nC

Technical Documents

SPICE Model

DMN4060SVT.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2403	2019-03-25	2019-06-19	Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, Additional Wafer Source, or Additional Assembly and Test site for Select Products.