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SOT563.pngDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in: general-purpose interfacing switches, power-management functions, and analog switches.
| AEC Qualified | Yes |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Automotive |
| Polarity | N+N |
| ESD Diodes (Y|N) | Yes |
| |VDS| (V) | 60 V |
| |VGS| (±V) | 20 ±V |
| |IDS| @TA = +25°C (A) | 0.305 |
| PD @TA = +25°C (W) | 0.25 |
| RDS(ON)Max@ VGS(10V)(mΩ) | 2000 mΩ |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 3000 mΩ |
| |VGS(TH)| Max (V) | 2.5 V |
| CISS Condition @|VDS| (V) | 25 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2570 | 2022-03-02 | 2022-06-02 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu Bond Wire, New Mold Compound Type, and New Die Attach Material for Select Automotive Products |
