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DMN6070LCA6

60V N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This new generation MOSFET is designed to minimize the footprint in handheld and mobile application. It can be used to replace many small-signals MOSFET with really small footprint.

Feature(s)

Low On-Resistance
Small 1.48mm x 0.98mm Package
Ultra-Thin 0.3mm Package
Low Input Capacitance
Fast Switching Speed
ESD Protected
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

Load switches
DC-DC primary switches

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	Yes
\|V_DS\| (V)	20 V
\|V_GS\| (±V)	60 ±V
\|I_DS\| @T_A = +25°C (A)	3.68
P_D @T_A = +25°C (W)	1.8
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	85 mΩ
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	95 mΩ
\|V_GS(TH)\| Min (V)	0.4 V
\|V_GS(TH)\| Max (V)	1 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	18.7 nC
C_ISS Typ (pF)	1613 pF
C_ISS Condition @\|V_DS\| (V)	30 V

Technical Documents

SPICE Model

DMN6070LCA6.spice.txt

Recommended Soldering Techniques

TN1.pdf