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DMNH6035SPDWQ

60V 175°C Dual N-Channel Enhancement Mode MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switch (UIS) Test in Production
  • Low RDS(ON) – Minimizes On State Losses
  • Low Input Capacitance
  • Wettable Flank for Improved Optical Inspections

Application(s)

  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N+N
ESD Diodes (Y|N) No
|VDS| (V) 60 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 33
PD @TA = +25°C (W) 2.4
PD @TC = +25°C (W) 68
RDS(ON)Max@ VGS(10V)(mΩ) 35 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 44 mΩ
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 10V (nC) 16 nC
CISS Typ (pF) 879 pF
CISS Condition @|VDS| (V) 25 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC