Back to MOSFET Master Table

DMNH6069SFVW

60V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8

Datasheet

Contact Sales

Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

Rated to +175°C—Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switch (UIS) Test in Production
Low RDS(ON)—Ensures Minimal On-State Losses  Small Form Factor Thermally Efficient Package Enables Higher Density End Products
Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product
Wettable Flank for Improved Optical Inspections
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotive-products/.
This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/

Application(s)

Power-Management Functions
DC-DC Converters

Product Specifications

Product Parameters

AEC Qualified	No
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	60 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	5
\|I_DS\| @T_C = +25°C (A)	18
P_D @T_A = +25°C (W)	3
P_D @T_C = +25°C (W)	38
R_DS(ON)Max@ V_GS(10V)(mΩ)	50 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	63 mΩ
\|V_GS(TH)\| Min (V)	1 V
\|V_GS(TH)\| Max (V)	3 V
Q_G Typ @ \|V_GS\| = 4.5V (nC)	6.4 nC
Q_G Typ @ \|V_GS\| = 10V (nC)	14 nC
C_ISS Typ (pF)	740 pF
C_ISS Condition @\|V_DS\| (V)	30 V

Technical Documents

SPICE Model

DMNH6069SFVW.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile