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DMP1081UCB4 (NRND)

NRND = Not Recommended for New Design

P-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation MOSFET is designed to minimize the on-state resistance (R_DS(ON)), yet maintain superior switching performance,making it ideal for high efficiency power management applications.

Feature(s)

Trench-MOS Technology with the Lowest On-Resistance:
- R_DS(ON) = 0.065Ω to Minimize On-State Losses
- Q_G = 2.5nC for Ultra-Fast Switching
V_GS(TH) = -0.5V Typ. for a Low Turn-On Potential
CSP with Footprint 1.0mm × 1.0mm
Height = 0.62mm for Low Profile
ESD = 3kV HBM Protection of Gate
Totally Lead-Free & Fully RoHS Compliant
Halogen and Antimony Free. “Green” Device
Qualified to AEC-Q101 Standards for High Reliability

Application(s)

Battery Management
Load Switch
Battery Protection

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP)	Standard
C_ISS Condition @\|V_DS\| (V)	6
C_ISS Typ (pF)	213
Compliance (Only Automotive(Q) supports PPAP)	Standard
ESD Diodes (Y\|N)	Yes
\|I_DS\| @T_A = +25°C (A)	3.3
P_D @T_A = +25°C (W)	1.59
Polarity	P
Q_G Typ @ \|V_GS\| = 4.5V (nC)	2.5
AEC Qualified	Yes
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	100
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	80
\|V_DS\| (V)	12
\|V_GS\| (±V)	6
\|V_GS(TH)\| Max (V)	0.65
\|V_GS(TH)\| Min (V)	0.35

Technical Documents

SPICE Model

DMP1081UCB4.spice.txt

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2556	2021-11-22	2022-05-22	Device End of Life (EOL)