Diodes Incorporated — Analog and discrete power solutions
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DMP1200UFR4

P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • Power Management Functions
  • Backlighting
  • Load Switch

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity P
ESD Diodes (Y|N) Yes
|VDS| (V) 12 V
|VGS| (±V) 8 ±V
|IDS| @TA = +25°C (A) 2
PD @TA = +25°C (W) 1.26
RDS(ON)Max@ VGS(4.5V)(mΩ) 100 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 160 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 200 mΩ
|VGS(TH)| Min (V) 0.35 V
|VGS(TH)| Max (V) 1 V
QG Typ @ |VGS| = 4.5V (nC) 5.8 nC
CISS Typ (pF) 514 pF
CISS Condition @|VDS| (V) 5 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2299 2018-03-01 2018-06-01 Additional Qualified (A/T) Assembly Test Site